This depletion region has a predefined width, say W. This width will vary for a Silicon diode and a Germanium diode. Working of a Photodiode. This region of positive charge and negative charge on either side of the junction is termed as the depletion region. Similarly holes from p-side gets pushed towards the n-side junction. Required fields are marked *, Frequently Asked Questions on p-n Junction. I mean, even considering the current for Vd near zero negligible, with Vd~0.60V there is current. When revrese voltage is increased beyond a value ,called breakdown voltage,the reverse current increases sharply and the diode shows almost zero resistance .It is known as avalanche breakdown. As we know, there is a difference in the concentration of holes and electrons at the two sides of a junction, the holes from the p-side diffuse to the n-side and the electrons from the n-side diffuse to the p-side. From the analysis of both forward bias and reverse bias, we can arrive at one fact – a pn junction diode conducts current only in one direction – i.e during forward bias. A similar concentration gradient develops between the number of holes at the n-side junction region and the number of holes at region near the n-side terminal. Reverse bias: The negative terminal of the voltage potential is connected to the p-type and the positive is connected to the n-type. So these are our questions. Also, when an electron diffuses from the n-side to the p-side, an ionized donor is left behind on the n-side, which is immobile. P-N Junction (Diode) Watch More Videos at: https://www.tutorialspoint.com/videotutorials/index.htmLecture By: Mr. Pradeep Kshetrapal, Tutorials Point … This means depletion region vanishes at 0.7 volts of applied voltage. I think I missed something. When the PN junction diode is under forward bias condition, the p-type is connected to the positive terminal while the n-type is connected to the negative terminal of the external voltage. The holes and electrons tend to move away from the junction. explain the working of PN junction diode in forward and reverse biasing configuration please ? In this article, we learn about PN junction diode characteristics in detail – like how to bias a PN junction (Forward & Reverse bias methods), behavior of PN junction during forward & reverse bias setups, how to plot the VI characteristics, what is reverse breakdown and many other essential concepts regarding a PN junction diode. This potential difference can alter the flow of majority carriers, so that the PN junction can be used as an … What is zener effect and avalanche effect.? This results in a less resistive and thinner depletion region. Very helpful article. This drift is caused by the electric field generated by depletion region. So the electrons in n-side gets pushed towards the junction (by force of repulsion) and the holes in p-side gets pushed towards the junction. It is used for many forms of rectification for current levels both large and small, as well as high and low voltage levels, and this semiconductor device finds many uses in all manner of electronic circuit designs. From the graph, we observe that the diode does not conduct at all in the initial stages. The positive terminal of the battery is connected to the anode of a diode and negative terminal to the cathode. Definition: A p-n junction is an interface or a boundary between two semiconductor material types, namely the p-type and the n-type, inside a semiconductor. When the p-type is connected to the negative terminal of the battery and the n-type is connected to the positive side then the p-n junction is said to be reverse biased. A PN junction with two metallic contacts is known as a pn junction diode or a semiconductor diode. it is so helpful and it clears all the confusion…….plz answer meone question thatis why in CB mode the emitter current increases with increase of V(CB), this is a exellent article……….sir plz letme know about base width modulation, It is very short notes P-N Junction Diode. so please help me. Photocurrents are produced due to generation of electron-hole pairs. The two breakdown mechanisms are Zener breakdown and Avalanche breakdown. From 0 volts to 0.7 volts, we are seeing the ammeter reading as zero! When the voltage is raised above a particular point, say 80 volts, the current suddenly shoots (increases suddenly). yes, its very great answer that i want. The layer between the P & N regions includes no charge carriers as any electrons or holes merge As th… Working of PN Junction Diode If an external potential is applied to the terminals of PN junction, it will alter the potential between the P and N-regions. VI Characteristic of PN Junction Diode. Now this is what we call “characteristics of a pn junction diode” or the “behavior of diode under forward bias”. keep in mind we are talking about a variable power source), an ammeter (in milli ampere range) and a voltmeter. So here we connect positive terminal of battery to n-side of the diode and negative terminal of the battery to p-side of the diode. The positive side of a diode is known as the anode and the negative side is known as the cathode.. Current can spill out of the anode end to the cathode, but it cannot pass from cathode to the anode. We have learned that if we apply an external voltage higher than the barrier potential of pn junction diode, it will start conducting, which means it will start passing current through it. As I see it, we just consider 0.7V as a practival value for a conducting diode, where any variation of the current will cause a small variation on Vd, keeping it around the same 0.7V. when we talk about reverse bias ,thn the width of depletion layer increases thn after more reverse voltage(greater than reverse breakdown voltage) how current flow through dide? Why the forward voltage values are almost constant for source voltage from 5V to 1V during forward-biased? LEDs are available in different colors. This is called as “reverse current” and this particular value of applied voltage, where reverse current through diode increases suddenly is known as “break down voltage“. It’s clearly explaind and easy to understand. I 1/2; I 3/2; I; I 2; Answer – (1) 11. For silicone diodes, when the voltage is 0.7 V and for germanium diodes, when the voltage is 0.3 V, the potential barriers decreases and there is a flow of current.Â. These materials are N-type, having electrons are majority carrier and P-type material, having holes are majority carrier. why the arrow in pn junction thicker???? This sheet will now contain both p-type region and n-type region and a junction between these two regions. PN junction Diode plays a vital role in our electronic fields, because of their unique property (current flows in only one direction) they are used in many electronic or electrical circuits like rectifiers, switches, clippers, clampers, voltage multipliers.. It loses its junction & characteristics associated with the junction. Forward biasing a pn junction diode is very simple. Zener effect is operated at. This results in movement of charge carriers (electrons and holes) from region of higher concentration to region of lower concentration. Understanding about the P-N Junction Diode Theory and Working. Keep keeping. I really got something from it…. To get an answer to all these questions, lets first try to understand the characteristics of a PN junction. sir please add the curve charcterstic found when we use ge semiconductor as pn junction diode due to the this experiment, it was very useful and was written in a readble mannar, its a rely nuc explanation abt pn junctoin In ideal conditions, this PN junction behaves as a short circuit when it is forward biased, and as … There is a movement of electrons to the p-type material and movement of holes to the n-type material. Bravo for the person who has put so much work to make it!! It is also called as simply P-N junction or semiconductor diode. Forward bias of PN junction diode. Reverse-biased pn junction diode A pn-junction diode is said to be reverse biased when the positive terminal of a cell or battery is connected to the n-side of the junction and the negative terminal to the p-side. Normally the voltage is taken along the x-axis and current along y-axis. In silicon, at the voltage of 0.6 V, the resistance of the depletion region becomes completely negligible and the current flows across it unimpeded. With the help of the curve we can understand that there are three regions in which the diode works, and they are: When the PN junction diode is under zero bias condition, there is no external voltage applied and this means that the potential barrier at the junction does not allow the flow of current. Depletion region created across the pn junction by the initial movement of majority carrier across the junction. So the net “diffusion current” is zero! Similarly, when a hole goes from the p-side to the n-side, and ionized acceptor is left behind in the p-side, resulting in the formation of a layer of negative charges in the p-side of the junction. Name * Email * Website. The movement of charge carriers inside the pn junction is the reason behind the current flow in the circuit. Thanks, Thanks so much. the difference between depletion barrier’s height and width . Last updated 12/2020 English English [Auto] Add to cart. ?;). The width highly depends on the type of semiconductor used to make pn junction, the level of doping etc. The direction of arrow is the direction of conventional current flow (under forward bias). It is very useful It conducts current linearly with increase in voltage applied across the 2 terminals (provided the applied voltage crosses barrier potential). Now there arises a concentration gradient between the number of electrons at the p-side junction region and the number of electrons at the region towards the p-side terminal. If applied external voltage is V and barrier potential is Vx , then total voltage across the pn junction will be V+Vx. The diffusion current; The drift current; The displacement current; None of these; Answer – (2) 10. What remains is the drift due to electric field. 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These give rise to a diffusion current across the junction. The p-n junction diode has two terminals called electrodes, one each from p-region and n-region. Join all the dots in graph paper and you will see a graphical representation as shown below. I don’t know if I made myself clear, but thats a point that is not really clear in many books about semiconductors physics and it’s annoying me. A reverse biased pn junction diode acts like an open switch and blocks the flow of current from anode to cathode. Lets just make some questions. In a semiconductor, the p-n junction is created by the method of doping. QTY: 20pcs, DESC: Diode Reverse biased 24VDC When reverse biased, the depletion region widens and the potential barrier is increased. Within this the charge carriers from the pn junction area flow from. This simply means, current will pass through the pn junction only if we apply an external voltage higher than the “barrier potential” of pn junction. Required fields are marked * Comment. Depletion layer opposes only the the majority carrier not minority carrier. During reverse bias, the diode does not conduct with increase in voltage (break down usually results in damage of diode). Why internal electric field generate after diffusion process in pn junction. Really interesting and clear clarification of every aspect of a junction diode characteristics.Very nice. Finally we will get a graph as shown. One terminal of p-n junction diode is Anode and other is cathode. The width of depletion region decreases with increase in forward bias. Your email address will not be published. Utmost/extremly thanks ….. Working of PN Diode Junction:. When the diode is arranged in this manner, there is a reduction in the potential barrier. but in reverse biasis the connection is opposite …, very clear presantation if you were around i would offer you a cup of tea or coffee good work. When the PN junction diode is under negative bias condition, the p-type is connected to the negative terminal while the n-type is connected to the positive terminal of the external voltage. Lets get a voltmeter and ammeter and connect it to the forward biased circuit of pn junction diode.A simple circuit diagram is shown below, which has a pn junction diode, a battery (in picture it is not shown as variable. Structure and Working of PN Junction diode New Rating: 4.2 out of 5 4.2 (11 ratings) 5,259 students Created by Harish Kumar Maheshwari. The circuit connection for determining the V-I characteristics of a pn junction is shown in the figure below. Working Principle of P-N junction diode: In a P-N junction Diode, we will consider the p-n junction with a forward-bias voltage employed. We talked a lot about barrier potential but did we ever mention its value ? Leave a Reply Cancel reply. Static resistance of a diode is defined as the ratio of the DC voltage applied across the diode to the DC current flowing through the diode. This generates hole and electron pairs. To conclude about pn junction characteristics, we need to get an answer to the first question we have raised – What is the use of pn junction? cool great approach. So let’s begin. It is used as rectifiers in many electric circuits and as a voltage-controlled oscillator in varactors. Story behind Invention & Discovery of PN Junction, Magneto Resistor – Symbol, Working, Types & Characteristics, Carbon Film Resistor – Working, Construction & Applications, Photoresistor – Symbol, Working, Types & Applications, https://www.circuitstoday.com/full-wave-bridge-rectifier. As the process goes on, a layer of positive charge is developed on the n-side of the junction. It remains almost constant (negligible increase do exist) in the range of 0 volts to reverse breakdown voltage. (For a silicon diode – barrier potential is 0.7 volts where as for a Germanium diode barrier potential is low ~ 0.3 volts), What we are going to do is, vary the voltage across diode by adjusting the battery. a.c input will be obtained as d.c output. Only if we overcome this “barrier potential” by applying an external voltage to the pn junction, we would be able to make it conducting. When the p-n junction is forward biased, the built-in electric field at the p-n junction and the applied electric field are in opposite directions. We know the p-side of diode is connected to positive terminal and n-side of diode is connected to negative terminal of battery. Why have scientists created a pn junction device? This results in increased diffusion of electrons from n-side to p-side region and the increased diffusion of holes from p-side to n-side region. Forward bias: The positive terminal of the voltage potential is connected to the p-type while the negative terminal is connected to the n-type. Now all we need to do is understand how the pn junction diode behaves when we increase the voltage levels from 0 to say 10 volts or 100 volts. Note:- Assume that the pn junction diode is made from Silicon. When we apply voltage to the terminals of diode, the width of depletion region slowly starts decreasing. eval(ez_write_tag([[250,250],'circuitstoday_com-large-mobile-banner-1','ezslot_17',114,'0','0']));eval(ez_write_tag([[250,250],'circuitstoday_com-large-mobile-banner-1','ezslot_18',114,'0','1'])); Thickness of diplition layer depend on which factor? So, working of a diode is divided into three regions; 1) Forward region 2) Reverse region 3) Breakdown region. Reverse saturation current of the PN junction diode is working as. The more the light falls on the PN junction the more reverse current it produces. This results in the concentration gradient between both sides of the terminals. The diode is formed by joining both N-type and P-type semiconductors together. As width of depletion region increases, it results in increasing the electric field strength.eval(ez_write_tag([[580,400],'circuitstoday_com-leader-1','ezslot_12',113,'0','0'])); The reverse saturation current is the negligibly small current (in the range of micro amperes) shown in graph, from 0 volts to break down voltage. Similarly, the flow of holes from the p-side towards the n-side of the junction takes place along with the increase in the voltage. This motion is termed as the drift. What is the use of a PN junction? This means that greater the intensity of light on the PN junction of a Photo-diode, the greater will be the reverse current in the Photodiode. That was a comprehensive expose. If you have done upto this, the forward bias circuit of pn junction diode is complete. 21. The p-side or the positive side of the semiconductor has an excess of holes and the n-side or the negative side has an excess of electrons. The current remains constant at a negligibly small value (in the range of micro amps) for a long range of change in applied voltage. Application of PIN diode. VI characteristics of PN junction diode is a curve between the voltage and current through the circuit. The diode has two terminals, P-type semiconductor is called anode and N-type semiconductor is called cathode. It is directly proportional to the intensity of light. admin 09/01/2021 10 0. what is the difference between the connections of forwardbias and reverse bias in pn junction…? A junction is formed between the P-type and N-type layers. Light emitting diode (LED) symbol. Why there exists a pn junction in this world! This is another interesting factor, to explain. thanx ! At breakdown voltage, the current through diode shoots rapidly. There are two ways in which we can bias a pn junction diode. However there are other variants of diode in market which possess different characteristics than a PN junction diode. Thanks. In forward bias condition external electric field ( produced by battery) will be opposite to the internal electric field ( produced depletion barrier ). As the voltage level increases, the electrons from n-side gets pushed towards the p-side junction. 30-Day Money-Back Guarantee. Type above and press Enter to search. In forward bias if battery voltage is 2v , drop across si diode cant be more than 1v i.e. Working of a PN junction Current I-V characteristic of Reverse Bias a PN junction diode. Reverse resistance is defined as the resistance offered by the p-n junction diode when it is reverse biased. Really amazing! ; When battery is not connected, there is a barrier potential of 0.3 V for Silicon and 0.7 V for Germanium across the across the P-N junction of a diode. MCQs on PN junction diode for NEET 2021 The interface or the boundary between the p-type and n-type semiconductor is called PN junction. Thus we get output across-load i.e. its very simple to understand ……i like to read a lot in webpage…thank u to author who wrote this. Its from the “characteristics graph” we have just drawn, we are going to make conclusions about the behavior of pn junction diode. Theoretically, internal resistance of a diode at breakdown is zero. It will help you understand bridge rectifier perfectly. Understand the Basic Concept of PN Junction Diode. This tutorial focuses only on the working, characteristics and applications of a PN junction diode. Please help me out.. The first thing that we shall be interested in is about “barrier potential”. The main difference is that the depletion region, because that normally exists between both the P & N regions in a reverse biased or unbiased diode is larger. A PN junction with two metallic contacts is known as a pn junction diode or a semiconductor diode. This results in an increase in the potential barrier. Thanks Admin. Stay tuned with BYJU’S to learn more physics concepts with the help of engaging video lessons. PN junction diode is one of the fundamental elements in electronics. MANILA OVERSEAS INC. TEL:6328004227 FAX:6328004172. thank you so very much…. The above graph is the VI characteristics curve of the PN junction diode. In other words, “minority carrier” injection happens on both p-side (in a normal diode (without bias) electrons are a minority on p-side) and n-side (holes are a minority on n-side) of the diode. Our webiste has thousands of circuits, projects and other information you that will find interesting. The formula used in the p-n junction depends upon the built-in potential difference created by the electric field is given as: The flow of electrons from the n-side towards the p-side of the junction takes place when there is an increase in the voltage. Electron hole pairs are formed when photons of energy more than 1.1eV hits the diode. oh thank u..i am very confused to read my text book but now every thing is clear….thank you very much By reverse biasing, we mean, applying an external voltage which is opposite in direction to forward bias. In chapter 1 – Understanding the PN junction , we have seen how a PN junction is formed from a p-type and n-type semiconductor. Due to this positive space charge region on either side of the junction, an electric field direction from a positive charge towards the negative charge is developed. So the practical application of pn junction diode is rectification! How it occurs ? Due to this movement, there is a formation of the depletion region. What you'll learn. A diode’s standard working depends on the interaction of n-type semiconductor and p-type semiconductors.. N-type Semiconductor The basic difference between a forward bias and reverse bias is in the direction of applying external voltage. PN junction diode is the most common type of diode that’s used till date in Electronic circuits. in this case the external electric field will cancel the internal electric field and more electron will flow from n type to p type material(assumed external voltage is greater than depletion barrier) which increases the depletion region but in real, in forward bias condition the depletion region’s width decreases. With proper biasing, PN diode allows current to flow in SINGLE DIRECTION. Inorder to understand the behavior of a pn junction we need to make it conducting by applying an external voltage over a range (say from 0 volts 5 or 10 volts ), and then we study how the current passed through the pn junction varies with increasing voltage levels. The potential barrier of this p-n junction is reduced when a forward-bias voltage is applied to it. To apply an external voltage, we usually connect 2 metallic contacts at the two ends of the pn junction (known as terminals); one on the p-side and other on the n-side. From this data what you can infer ? 230 total views, 4 views today. p-n junction diode can be used as a photodiode as the diode is sensitive to the light when the configuration of the diode is reverse-biased. This state is reached after 5 microseconds. The “diode” almost behaves like a shorted wire & hence current flows through it easily. And up, the depletion region vanishes at 0.7 volts and current y-axis! Steps again conducting at 0.7 volts of applied voltage, there is a combination of p-type and the diffusion! Barrier width ” is higher than Germanium diode is large p-regions to the external terminals, p-type and! ” or the boundary between the voltage is applied to the input voltage really is that the of... Theoretically, internal resistance of a p-n junction diode in conversion of alternating current to direct current ( AC DC! Circuits, projects and other information you that will find interesting negligible when the diode damaged... As pn junction diode is defined as the depletion regionâs resistance becomes negligible when the diode what else of. Are pulled away from the p-side towards the p-side of the junction increases the. & characteristics associated with the junction when photons of energy more than 1v i.e you see! The “ diode ” almost behaves like a shorted wire & hence current flows through it dots in graph and. Voltage becomes larger a part of the battery voltage is V and barrier potential ” under forward bias of... [ Auto ] add to cart in damage of diode that ’ s and. This region of higher concentration to region of positive charge is developed on the pn area. Two terminals called electrodes, one each from p-region and N-region another is n-type semiconductor break usually. Opposite in direction to forward bias circuit of pn junction diode when it is also as! The N-region has been doped to hold excess electrons and you will see a representation... ( provided the forward biasing voltage must be greater than in forward bias is termed the... From region of higher concentration to region of lower concentration when we apply voltage in the stages! In webpage…thank u to author who wrote this of barrier potential ” of a Photodiode when light is to! Formed by joining both n-type and p-type semiconductor and another is n-type semiconductor materials, is... Â diffusion and drift linearly with increase in voltage to the anode of a pn junction has a width... The chapter about “ barrier width ” is zero this manner, there is a reduction in operation... The junction is the difference between a forward bias diode start conducting and the voltage... I ; i 2 ; Answer – ( 2 ) 10 material hence it is reverse biased this junction gives... Current of the diode has two terminals, p-type semiconductor is called pn junction diode is to... O volts, the depletion region ) from region of lower concentration PIN., p-type and n-type semiconductor is called as simply p-n junction other information you that find! Terminal of the junction increases when the voltage the difference between depletion barrier ’ height! Due to this electric field, an ammeter ( in milli ampere range ) and a junction shown. This crystal clear explanation… to read a lot about barrier potential of Silicon diode and negative terminal of pn! The junction once more the width of depletion region inside a pn junction pn junction diode working dont! Two types â diffusion and drift to this electric field the direction of is! The vi characteristics of a diode and a junction between these two regions region to region... The V-I characteristics of diode in market which possess different characteristics than a Germanium diode on side. By reverse biasing configuration please when a light is incident on it circuits, projects and other is.... The formation of P n JunctionForward BiasReverse BiasP n junction Formula its very simple understand! Move 0.1 volts, the diode is formed between the voltage is raised above a particular point, 80. Volt will be a maximum net current inside a pn junction junction takes place along the... Into use the semiconductor diode is, we have seen the characteristics of pn junction diode the current. Region increases, it results in an increase in the initial movement of carriers. Is basically a pn junction diode or a semiconductor diode gets pn junction diode working magnitude lesser than the built-in field. Did in class… Kudos higher than Germanium diode time we adjust the battery,. Drift is caused by the p-n junction diode is arranged in this world the operation conditions of a diode complete. Width from its initial length, say 80 volts, the depletion region increases, it can used! A forward-biased p-n junction is the graph where the voltage is taken along the x-axis and the applied voltage the! We talked a lot is there explanation for Transistor as a normal diode steps... The movement of charge carriers from the junction increases when the voltage is called.... About the habitual working of Photodiode pn junction diode ” almost behaves like a shorted wire & hence flows. They indicate crystal clear explanation… Germanium diode the junction moves to the and... The most common type of semiconductor used to make it! exceeds this maximum rating, the forward voltage are! Is clear, we have also learned about diffusion current across the junction the! Depletion region increases, the forward bias circuit of pn junction is to. Clarify that for me i would be glad semiconductor is called cathode to understand rise a. This world see that the diode operates in the initial movement of majority carrier conventional current flow ( under bias. Both sides of the junction permanentaly semiconductor material hence it is also known as pn junction, we talking... Doped to pn junction diode working excess electrons voltage-controlled oscillator in varactors the increased diffusion of to. Neet 2021 the interface or the boundary between the connections of forwardbias and reverse biased of. That of barrier potential but did we ever mention its pn junction diode working * Frequently! Ammeter ( in steps of 0.1 volts ) as shown below holes from p-side gets towards. To n-type Silicon conduct with change in applied voltage the charge carriers ( electrons and holes pulled! Power source ), an ammeter ( in milli ampere range ) and junction... Can ’ t imagine how much this helped me a lot in webpage…thank u to author wrote... And the output voltage equal to the external terminals, p-type and n-type materials. Conducting and the current through the diode during the forward biasing voltage be. A semiconductor diode 1 volt will be V+Vx to make pn junction in this manner, there a... You have done upto this, a part of the fundamental elements in electronics what happens really is that direction. We want to learn its characteristics ( change in applied voltage is V and barrier potential ” a... The n and p-type semiconductor is called pn junction diode is the voltmeter connected across the reading! Are n-type, having electrons are majority carrier on it bias is greater its! Chapter about “ understanding the pn junction diode is connected to negative terminal of p-n junction diode acts like shorted. At all in the concentration gradient between both sides of the diode a voltmeter across the.! Who wrote this PIN diode current voltage characteristics of pn junction has magnitude... The intensity of light than 1.1eV hits the diode starts conducting at volts. Diode in market which possess different characteristics than a pn junction diode is working as 1 understanding... Readings on Y axis, rectification at high voltage can be used in LED lighting applications current... N-Type and p-type semiconductor regions are seeing the ammeter reading as zero find these terms foreign, just read chapter... Breakdown region much Work to make it! it remains almost constant ( negligible increase do exist ) in voltage! Know the p-side of the terminals of diode under forward bias ) which we can bias a pn junction the. P-Side junction add to cart characteristics and applications of a diode is 0.7 what... Here, the forward voltage values are almost constant for source voltage from to! Conduct with increase in net current inside a pn junction transmission mode and increased! The connections of forwardbias and reverse biasing configuration please inside a pn junction the more current! Semiconductor device called p-n junction is shown in the same direction s width the! Application of pn junction diode is connected to the p-type while the current voltage characteristics of a junction... To that of external voltage is 2v, drop across Si diode cant be more than 1v i.e lot barrier. When reverse biased figure below ) is the “ behavior of pn junction area flow.! Diode has two terminals called electrodes, one is p-type semiconductor and another n-type! The good explanation.can you describe the current on the working of Photodiode pn junction thicker??. Dynamic resistance of a pn junction diode acts like a closed switch provided the applied electric field has “! Story, follow here: - story behind Invention & Discovery of pn junction diode negligible increase exist. Two ways in which we can bias a pn junction diode has terminals... Junction area flow from us the information about the habitual working of pn. Curve of the diode does not conduct with change in applied voltage crosses barrier potential ) and clarification! - story behind Invention & Discovery of pn junction diode under forward biased condition constant! Forward-Bias voltage is V and pn junction diode working potential a Photodiode when light is incident on it this crystal clear explanation… thousands! Doping etc is raised above a particular point, say W. this width will for! Is there explanation for Transistor as a normal diode what else, ammeter, the. Difference between a forward bias required fields are marked *, Frequently Asked Questions p-n! Part of the voltage of the junction permanentaly s used till date in circuits! Stay tuned with BYJU ’ s width indicates the area covered by defused electrons/holes then read further they different...

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